Patent · US Active

Semiconductor device structure with magnetic element covered by polymer material

US11621317B2 · kind B2 · utility

1Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 16, 2021
Grant dateApr 4, 2023
Priority date
Expiry dateOct 6, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/05
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a magnetic element over the semiconductor substrate. The semiconductor device structure also includes an isolation layer covering the magnetic element and a portion of the semiconductor substrate. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding edges of the magnetic element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.