Light-emitting diode chip and method of manufacturing the same

US11621375B2 · kind B2 · utility

Assignee

• XIAMEN CHANGELIGHT CO., LTD. · CN

Inventors

• Yingce LIU · Xiamen, CN
• Bin Song · Lanzhou, CN
• Junxian Li · Zhejiang, CN
• Qilong WU · Longbeilingcun, CN
• Yang Wang · Nanhu, CN
• Kaixuan Chen · Xiamen, CN
• Zhendong Wei · Xiamen, CN
• Xingen WU · Xiamen, CN
• Hongyi Zhou · Niskayuna, US
• Lihe CAI · Fujian, CN
• Xinmao Huang · Fujian, CN
• Zhiwei Lin · Xiamen, CN
• Yongtong Li · Fujian, CN
• Qimeng Lyu · Fujian, CN
• Hexun Cai · Fujian, CN
• Gengcheng Li · Fujian, CN

Key dates

• Filing date: Oct 7, 2017
• Grant date: Apr 4, 2023
• Expiry date: Oct 7, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8162

Abstract

A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).