Flip-chip of light emitting diode and manufacturing method and illuminating method thereof

US11621380B2 · kind B2 · utility

Assignee

• XIAMEN CHANGELIGHT CO., LTD. · CN

Inventors

• Xingen WU · Xiamen, CN
• Yingce LIU · Xiamen, CN
• Junxian Li · Zhejiang, CN
• Qilong WU · Longbeilingcun, CN

Key dates

• Filing date: Jul 31, 2018
• Grant date: Apr 4, 2023
• Expiry date: May 3, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

A flip-chip of light emitting diode includes at least one reflective layer, at least one N-type electrode, at least one P-type electrode, at least one distributed Bragg reflector, and an epitaxial unit. The epitaxial unit includes a substrate, an N-type layer, an active layer, and a P-type layer, wherein the substrate, the N-type layer, the active layer, and the P-type are sequentially stacked. The epitaxial unit has at least one N-type layer exposed portion, which is extended from the outer side surface of the P-type layer to the N-type layer via the active layer. The at least one reflective layer is formed on the P-type layer, wherein the at least one distributed Bragg reflector is integrally bonded to the N-type layer, the active layer, the P-type layer, and the at least one reflective layer. The at least one N-type electrode is electrically connected with the N-type layer and the at least one P-type electrode is electrically connected with the P-type layer.