Acoustic wave device
US11621688B2 · kind B2 · utility
1Cited by
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20Claims
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Assignee
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Key dates
| Filing date | Mar 25, 2022 |
| Grant date | Apr 4, 2023 |
| Priority date | — |
| Expiry date | Mar 25, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/568
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction intersecting with a thickness direction of the piezoelectric layer. The acoustic wave device uses a bulk wave of a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. The piezoelectric layer is on a first main surface of the silicon substrate. The acoustic wave device further includes a trap region on a side of a second main surface of the piezoelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.