Bipolar junction transistor optical modulator
US11624941B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Apr 12, 2021 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Aug 1, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/0153
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Semiconductor optical modulators are described that utilize bipolar junction transistor (BJT) structure within the optical modulator. The junctions within the BJT can be designed and biased to increase modulator efficiency and speed. An optical mode may be located in a selected region of the BJT structure to improve modulation efficiency. The BJT structure can be included in optical waveguides of interferometers and resonators to form optical modulators.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.