Semiconductor structure and method for forming the same

US11626289B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Xi Lin · Tainan, TW
• Sheng-Tsung Wang · Hsinchu, TW

Key dates

• Filing date: Jul 17, 2020
• Grant date: Apr 11, 2023
• Expiry date: Jul 17, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3105
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a semiconductor structure includes providing a substrate, forming a stop layer over a surface of the substrate, forming a dielectric layer over a surface of the stop layer, forming a first opening in the dielectric layer and exposing a portion of the stop layer, modifying the portion of the stop layer exposed at a bottom of the first opening to form a modification layer, and removing the modification layer to form a second opening from the first opening.