Pattern formation method and method for manufacturing a semiconductor device
US11626292B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Mar 8, 2021 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Mar 8, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.