Patent · US Active

Low-leakage regrown GaN p-n junctions for GaN power devices

US11626483B2 · kind B2 · utility

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1References

20Claims

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Assignee

ARIZONA BOARD OF REGENTS FOR AND ON BEHALF OF ARIZONA STATE UNIVERSITY · US

Inventors

Yuji Zhao · Chandler, US
Kai Fu · Palo Alto, US
Houqiang Fu · Tempe, US

Key dates

Filing date	Sep 24, 2020
Grant date	Apr 11, 2023
Priority date	—
Expiry date	May 23, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/106
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Fabricating a regrown GaN p-n junction includes depositing a n-GaN layer on a substrate including n+-GaN, etching a surface of the n-GaN layer to yield an etched surface, depositing a p-GaN layer on the etched surface, etching a portion of the n-GaN layer and a portion of the p-GaN layer to yield a mesa opposite the substrate, and passivating a portion of the p-GaN layer around an edge of the mesa. The regrown GaN p-n junction is defined at an interface between the n-GaN layer and the p-GaN layer. The regrown GaN p-n junction includes a substrate, a n-GaN layer on the substrate having an etched surface, a p-GaN layer on the etched surface, a mesa defined by an etched portion of the n-GaN layer and an etched portion of the p-GaN layer, and a passivated portion of the p-GaN layer around an edge of the mesa.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.