Light detecting device and method of manufacturing same
US11626529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2021 |
| Grant date | Apr 11, 2023 |
| Priority date | — |
| Expiry date | Feb 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/331
Abstract
A light detecting device includes a light absorbing layer configured to absorb light in a wavelength range from visible light to short-wave infrared (SWIR); a first semiconductor layer provided on a first surface of the light absorbing layer; an anti-reflective layer provided on the first semiconductor layer and comprising a material having etch selectivity with respect to the first semiconductor layer; and a second semiconductor layer provided on a second surface of the light absorbing layer. The first semiconductor layer has a thickness less than 500 nm so as to be configured to allow light to transmit therethrough in the wavelength range from visible light to SWIR.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.