Method for regulating inert gas flow, method for preparing monocrystalline silicon, and monocrystalline silicon
US11629985B2 · kind B2 · utility
0Cited by
0References
12Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 26, 2020 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Jun 3, 2041 |
Classification
- Technology area (CPC F)Mechanical Engineering; Lighting; Heating
- CPC primaryF26B21/022
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure provides a method for regulating an inert gas flow in a crystal pulling furnace, a method for preparing monocrystalline silicon, and monocrystalline silicon. The method for regulating an inert gas flow includes introducing the inert gas into a main furnace chamber of the crystal pulling furnace from an auxiliary furnace chamber of the crystal pulling furnace, and regulating a flow direction of the inert gas flow introduced into the auxiliary furnace chamber of the crystal pulling furnace.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.