Glass electrochemical sensor with wafer level stacking and through glass via (TGV) interconnects
US11630076B2 · kind B2 · utility
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9References
19Claims
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Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Apr 26, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2217/254
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of forming a glass electrochemical sensor is described. In some embodiments, the method may include forming a plurality of electrical through glass vias (TGVs) in an electrode substrate; filling each of the plurality of electrical TGVs with an electrode material; forming a plurality of contact TGVs in the electrode substrate; filling each of the plurality of contact TGVs with a conductive material; patterning the conductive material to connect the electrical TGVs with the contact TGVs; forming a cavity in a first glass layer; and bonding a first side of the first glass layer to the electrode substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.