Linear sensor with dual spin valve element having reference layers with magnetization directions different from an external magnetic field direction
US11630168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 3, 2021 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | Jun 18, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/39
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In one aspect, a linear sensor includes at least one magnetoresistance element that includes a first spin valve and a second spin valve positioned on the first spin valve. The first spin valve includes a first set of reference layers having a magnetization direction in a first direction and a first set of free layers having a magnetization direction in a second direction orthogonal to the first direction. The second spin valve includes a second set of reference layers having a magnetization direction in the first direction and a second set of free layers having a magnetization direction in a third direction orthogonal to the first direction and antiparallel to the second direction. The first direction is neither parallel nor antiparallel to a direction of an expected magnetic field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.