Ultrafast laser annealing of thin films

US11631593B2 · kind B2 · utility

Assignee

• The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventors

• Marc Currie · Washington, US
• Virginia D. Wheeler · Alexandria, US

Key dates

• Filing date: Mar 29, 2022
• Grant date: Apr 18, 2023
• Expiry date: Mar 29, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.