Thin-film transistor substrate having a thin-film layer including amorphous silicon disposed between a first electrode and a second electrode of a storage capacitor and display apparatus comprising the same
US11631727B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2020 |
| Grant date | Apr 18, 2023 |
| Priority date | — |
| Expiry date | May 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/131
Abstract
A thin-film transistor substrate includes a semiconductor layer disposed on a substrate, a gate insulating layer disposed on the semiconductor layer, a first electrode that at least partly overlaps the semiconductor layer, wherein the gate insulating layer is disposed between the first electrode and the semiconductor layer, a plurality of thin-film layers disposed on the first electrode, and a second electrode that at least partly overlaps the first electrode, wherein the plurality of thin-film layers are disposed between the second electrode and the first electrode, wherein at least one of the plurality of thin-film layers includes amorphous silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.