Quasicrystalline material and semiconductor device applying the same
US11634793B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 30, 2020 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Feb 21, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC22C2200/06
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.