Semiconductor device having capacitor and resistor and a method of forming the same
US11637100B2 · kind B2 · utility
1Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2021 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Aug 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure generally relates to a semiconductor device having a capacitor and a resistor and a method of forming the same. More particularly, the present disclosure relates to a metal-insulator-metal (MIM) capacitor and a thin film resistor (TFR) formed in a back end of line portion of an integrated circuit (IC) chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.