III-nitride semiconductor device with non-active regions to shape 2DEG layer
US11637177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2020 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Oct 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a first III-nitride layer, a second III-nitride layer, a first contact layer, a second contact layer, a structure, and a gate layer. The second III-nitride layer is in direct contact with the first III-nitride layer. The first contact layer and the second contact layer are disposed over the second III-nitride layer. The structure is adjacent to an interface of the first III-nitride layer and the second III-nitride layer, and a material of the structure is different from a material of the first III-nitride layer or a material of the second III-nitride layer. The gate layer is disposed between the first contact layer and the second contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.