Patent · US Active

Schottky diode

US11637210B2 · kind B2 · utility

0Cited by
3References
9Claims
0Family size

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Key dates

Filing dateDec 11, 2018
Grant dateApr 25, 2023
Priority date
Expiry dateApr 29, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/221

Abstract

A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.