Image sensor using a boosting capacitor and a negative bias voltage
US11637979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2020 |
| Grant date | Apr 25, 2023 |
| Priority date | — |
| Expiry date | Aug 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1434
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.