Apparatus and method of depositing a thin layer
US11639550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2021 |
| Grant date | May 2, 2023 |
| Priority date | — |
| Expiry date | Oct 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67303
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for depositing a thin layer and associated method, the apparatus including a process chamber; a support in the process chamber, substrates being supportable on the support at different heights; a gas injector configured to inject a gas into the process chamber; and a heater configured to heat the process chamber, wherein the gas injector includes a first injector configured to inject a first gas; and a second injector configured to inject a second gas, a flow rate of the first gas injected from the first injector ranges from 120 sccm to 240 sccm, and a flow rate of the second gas injected from the second injector ranges from 1,200 sccm to 2,400 sccm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.