Semiconductor device formed on SOI substrate
US11640938B2 · kind B2 · utility
0Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2021 |
| Grant date | May 2, 2023 |
| Priority date | — |
| Expiry date | Aug 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is disclosed. The semiconductor device includes impurity regions formed in surface portions of a substrate, gate structures formed on surface portions of the substrate between the impurity regions, a first insulating layer formed on the impurity regions and the gate structures, first wiring patterns formed on the first insulating layer, and first contact patterns connecting the impurity regions and the first wiring patterns through the first insulating layer, and the first wiring patterns are arranged in a zigzag shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.