Self-rectifying resistive memory and fabrication method thereof

US11641787B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Qing Luo · Beijing, CN
• Hangbing Lv · Beijing, CN
• Ming Liu · Beijing, CN

Key dates

• Filing date: Mar 28, 2018
• Grant date: May 2, 2023
• Expiry date: Mar 28, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

The present disclosure provides a self-rectifying resistive memory, including: a lower electrode; a resistive material layer formed on the lower electrode and used as a storage medium; a barrier layer formed on the resistive material layer and using a semiconductor material or an insulating material; and an upper electrode formed on the barrier layer to achieve Schottky contact with the material of the barrier layer; wherein, the Schottky contact between the upper electrode and the material of the barrier layer is used to realize self-rectification of the self-rectifying resistive memory. Thus, no additional gate transistor or diode is required as the gate unit. In addition, because the device has self-rectifying characteristics, it is capable of suppressing read crosstalk in the cross-array.