Organometallic compounds for the manufacture of a semiconductor element or electronic memory

US11643425B2 · kind B2 · utility

Assignee

• UMICORE AG & CO. KG · DE

Inventors

• Nicholas RAU · Marburg, DE
• Jörg Sundermeyer · Marburg, DE
• Henrik SCHUMANN · Weinbach, DE
• Andreas RIVAS NASS · Bensheim, DE
• Annika Frey · Hanau, DE
• Wolf Schorn · Gießen, DE
• Eileen Woerner · Nidderau, DE
• Ralf Karch · Kleinostheim, DE
• Angelino Doppiu · Seligenstadt, DE

Key dates

• Filing date: Jul 26, 2019
• Grant date: May 9, 2023
• Expiry date: Jul 26, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

The invention relates to compounds in accordance with the general formula [Ru(arene)(Ra—N═CR1—CR3═N—Rb)] or [Ru(arene)((Rc,Rd)N—N═CRH1—CRH3═N—N(Re,Rf))]. In this case, arene is selected from the group consisting of mononuclear and polynuclear arenes and heteroarenes. R1, R3, RH1, RH3 and Ra-Rf are independently selected from the group consisting of H, an alkyl radical (C1-C10) and an aryl radical. It further relates to methods for the production of these compounds, compounds obtainable according to these methods, their use and a substrate having on a surface thereof a ruthenium layer or a layer containing ruthenium. In addition, the invention relates to a method for producing compounds [Ru(arene)X2]2, wherein arene is selected from the group consisting of mononuclear and polynuclear arenes and X=halogen, compounds of this type obtainable according to this method, and their use. The aforementioned ruthenium(O) compounds can be produced in a simple, cost-effective and reproducible manner with a high degree of purity and good yield. Due to their high degree of purity, they are suitable for use as ruthenium(O) precursors.