High-refractive-index hydrogenated silicon film and methods for preparing the same
US11643716B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2018 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | May 17, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/32
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A preparation method for a high-refractive index hydrogenated silicon film, a high-refractive index hydrogenated silicon film, a light filtering lamination and a light filtering piece. The method includes: (a) by magnetic controlled Si target sputtering, Si deposits on a base body, forming a silicon film, which (b) forms an oxygenic hydrogenated silicon film in environment of active hydrogen and active oxygen, the amount of active oxygen accounts for 4%-99% of the total amount of active hydrogen and active oxygen, or, a nitric hydrogenated silicon film in environment of active hydrogen and active nitrogen, the amount of active nitrogen accounts for 5%-20% of the total amount of active hydrogen and active nitrogen. Sputtering and reactions are separately conducted, Si first deposits on the base body by magnetic controlled Si target sputtering, and then plasmas of active hydrogen and active oxygen/nitrogen react with silicon for oxygenic or nitric SiH.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.