Patent · US Active

Temperature insensitive distributed strain monitoring apparatus and method

US11644305B2 · kind B2 · utility

0Cited by
1References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 9, 2021
Grant dateMay 9, 2023
Priority date
Expiry dateSep 26, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2006/12164
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

An apparatus for monitoring strain in an optical chip in silicon photonics platform. The apparatus includes a silicon photonics substrate shared with the optical chip. Additionally, the apparatus includes an optical input configured in the silicon photonics substrate to supply an input signal of a single wavelength. The apparatus further includes a first waveguide arm and a second waveguide arm embedded in the silicon photonics substrate to form an on-chip interferometer. The second waveguide arm forms a delay line being disposed at a region in or adjacent to the optical chip. The on-chip interferometer is configured to generate an interference pattern serving as an indicator of strain distributed at the region in or adjacent to the optical chip. The interference pattern is caused by a temperature-independent phase shift at the single wavelength of the interferometer between the first waveguide arm and the second waveguide arm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.