Temperature sensor semiconductor device with pair of diodes and feedback loop
US11644367B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 3, 2019 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | May 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M1/46
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In an embodiment a semiconductor device includes a first diode and a second diode of specified sizing or biasing ratio, a negative voltage supply, a first resistor for a proportional to absolute temperature (PTAT) voltage drop, wherein the first diode is connected between the negative supply voltage and the first resistor, an array of dynamically matched current sources employing a dynamic element matching controller, wherein the first resistor is connected between the first diode and a first input of the array, and wherein the second diode is connected between the negative supply voltage and a second input of the array and a successive approximation register (SAR) feedback loop configured to drive a voltage difference to zero, wherein the voltage difference occurs between a first node present between the first resistor and the first input of the array and a second node present between the second diode and the second input of the array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.