Negative photoresist used for semiconductor encapsulation process
US11644750B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2019 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Jun 18, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0758
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a negative photoresist used for a semiconductor encapsulation process, belonging to the technical field of semiconductor processing. A negative photoresist formulation includes 40-65 wt % of modified epoxy acrylate, 3-6 wt % of photosensitizer, 100-1000 ppm of leveling agent, and the remainder of solvent; the leveling agent is a solution of a 7:3 mass ratio of polydimethylsiloxane copolymer having a molecular weight of 3000-6000 and propylene glycol monomethyl ether acetate. If the negative photoresist is coated at a thickness of about 50 um, the coating uniformity can be controlled to below 5%, ensuring the quality of exposure such that the thickness of electroplated copper meets requirements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.