Magnetic multi-layers containing MgO sublayers as perpendicularly magnetized magnetic electrodes for magnetic memory technology
US11646143B2 · kind B2 · utility
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30Claims
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Key dates
| Filing date | May 21, 2019 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Mar 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Various devices are described (along with methods for making them), where the device has a tunnel barrier sandwiched between two magnetic layers (one of the magnetic layers functioning as a free layer and the other of the magnetic layers functioning as a reference layer). One magnetic layer underlies the tunnel barrier and the other magnetic layer overlies the tunnel barrier, thereby permitting spin-polarized current to pass across the magnetic layers and through the tunnel barrier. At least one of the magnetic layers includes a metal oxide sublayer (e.g., an MgO sublayer) sandwiched between magnetic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.