Plasma processing apparatus and plasma processing method
US11646179B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Jun 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32798
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a chamber providing a space for processing a substrate, a substrate stage configured to support the substrate within the chamber and including a lower electrode, an upper electrode facing the lower electrode, a focus ring in or on an upper peripheral region of the substrate stage to surround the substrate, and a plasma adjustment assembly in at least one of a first position between the upper electrode and the lower electrode and a second position between the focus ring and the lower electrode, the plasma adjustment assembly including a photoreactive material layer and a plurality of light sources configured to irradiate light onto a local region of the photoreactive material layer. A capacitance of the local region is changed as the light is irradiated to the local region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.