Manufacturing of foreign oxide or foreign nitride on semiconductor
US11646193B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Dec 9, 2019 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Dec 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.