Three-dimensional assembled active material from two-dimensional semiconductor flakes for optoelectronic devices
US11646202B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2016 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Nov 1, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/90
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for preparing stacks of metal chalcogenide flakes includes: (a) reacting together a source of the metal atom of the target metal chalcogenide with a source of the chalcogenide atom of the target metal chalcogenide, in the presence of a spacer, so as to produce flakes of the metal chalcogenide; (b) depositing metal chalcogenide flakes obtained using step (a) onto a substrate to form a stack of assembled metal chalcogenide flakes, wherein the spacer contains an alkyl chain linked to a functional group able to bond to the metal chalcogenide surface, said alkyl chain having a length of less than 18 carbon atoms, preferably between 6 and 14 carbon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.