Metal lead, semiconductor device and methods of fabricating the same
US11646223B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2020 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | May 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal lead, a semiconductor device and method of fabricating the same are disclosed, in which a first trench is formed simultaneously with a wiring layer trench, followed by the formation of a second trench in communication with the first trench. After that, a conductive structure is formed simultaneously with a wiring layer by filling a conductive material simultaneously in the first, second and wiring layer trenches. In this way, it is neither necessary to externally connect the conductive structure by forming an additional opening, nor to form the wiring layer by etching a deposited aluminum layer. This saves the use of two photomasks, leading to savings in production cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.