Patent · US Active

Semiconductor devices and methods of manufacturing the same

US11646305B2 · kind B2 · utility

0Cited by
7References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 2020
Grant dateMay 9, 2023
Priority date
Expiry dateApr 29, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/975
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Semiconductor devices may include standard cells arranged in a first direction and a second direction intersecting the first direction. Both the first and second directions may be parallel to an upper surface of the substrate. Each of the standard cells may include semiconductor elements. The semiconductor device may also include filler cells between two standard cells, and each of the filler cells may include a filler active region and a filler contact connected to the filler active region and may extend in the first direction. The semiconductor device may further include a lower wiring pattern electrically connected to at least one of the semiconductor elements and may extend into at least one of the filler cells in the second direction, and the filler contacts may include wiring filler contacts lower than the lower wiring pattern and connected to at least one of the lower wiring pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.