Short-circuit semiconductor component and method for operating same

US11646365B2 · kind B2 · utility

Assignee

• Infineon Technologies Bipolar GmbH & Co. KG · DE

Inventors

• Uwe Kellner-Werdehausen · Pretzfeld, DE
• Michael Stelte · Schloss Hamborn, DE
• Markus Droldner · Ahlen, DE
• Dirk Pikorz · Warstein, DE
• Peter Weidner · Soest, DE
• Reiner Barthelmess · Soest, DE
• Mario Schenk · Bad Gams, AT
• Jens Przybilla · Warstein, DE

Key dates

• Filing date: Jan 23, 2019
• Grant date: May 9, 2023
• Expiry date: Aug 3, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/126
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second conduction type complementary to the first conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode with a rear-side electrode width, and the front-side base region is electrically connected to a front-side electrode with a front-side electrode width. A turn-on structure with a turn-on structure width is embedded into the front-side and/or rear-side base region and is covered by the respective electrode. The turn-on structure is configured to be turned on depending on a supplied turn-on signal and to produce, on a one-off basis, an irreversible, low-resistance connection between the two electrodes. The ratio of the turn-on structure width to the respective electrode width is less than 1.