Opto-electronic device and image sensor including the same
US11646393B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2020 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Jul 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/191
Abstract
Provided is an opto-electronic device including a semiconductor substrate doped with a first conductivity type impurity, a source region and a drain region provided on the semiconductor substrate spaced apart from each other and doped with a second conductivity type impurity which is electrically opposite to the first conductivity type impurity, a first electrode and a second electrode electrically connected to the source region and the drain region, respectively, a quantum dot layer provided between the source region and the drain region on the semiconductor substrate and including quantum dots, a first insulation layer configured to insulate the semiconductor substrate and the quantum dot layer from each other, and a transparent electrode layer provided on the quantum dot layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.