Patent · US Active

Radiation-emitting semiconductor body and semiconductor chip

US11646394B2 · kind B2 · utility

0Cited by
46References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 5, 2018
Grant dateMay 9, 2023
Priority date
Expiry dateMar 5, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/84

Abstract

A radiation-emitting semiconductor body having a semiconductor layer sequence includes an active region that generates radiation, an n-conducting region and a p-conducting region, wherein the active region is located between the n-conducting region and the p-conducting region, the p-conducting region includes a current expansion layer based on a phosphide compound semiconductor material, and the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.