Radiation-emitting semiconductor body and semiconductor chip
US11646394B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2018 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Mar 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A radiation-emitting semiconductor body having a semiconductor layer sequence includes an active region that generates radiation, an n-conducting region and a p-conducting region, wherein the active region is located between the n-conducting region and the p-conducting region, the p-conducting region includes a current expansion layer based on a phosphide compound semiconductor material, and the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.