Semiconductor light emitting device
US11646398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | Aug 1, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
Abstract
A semiconductor light emitting device including a semiconductor laminate having first and second surfaces, the semiconductor laminate including first and second conductivity-type semiconductor layers, and an active layer between the semiconductor layers; a partition structure on the first surface, the partition structure having a window defining a light emitting region of the first surface of the semiconductor laminate; a wavelength converter in the window, the wavelength converter being configured to convert a wavelength of light emitted from the active layer; and a first electrode and a second electrode on the second surface of the semiconductor laminate and respectively connected to the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the semiconductor laminate includes a plurality of first patterns arranged in the light emitting region of the first surface, and a plurality of second patterns arranged in a covered region of the first surface contacting the partition structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.