Multi-active-region cascaded semiconductor laser
US11646548B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 24, 2021 |
| Grant date | May 9, 2023 |
| Priority date | — |
| Expiry date | May 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18386
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present application relates to the technical field of semiconductor optoelectronics, in particular to a multi-active-region cascaded semiconductor laser. The multi-active-region cascaded semiconductor laser comprises: a plurality of cascaded active regions, wherein each cascaded active region comprises a plurality of active regions; and a tunnel junction, arranged on at least one side of the cascaded active region and electrically connected with the cascaded active region; wherein in the cascaded active region, at least one group of adjacent active regions are connected through a barrier layer. In this way, more active regions are added in the periodic gain structure, which improves the internal quantum efficiency of the device and also reduces the carrier density, thereby obtaining more gains. The barrier layer connection does not have the property of introducing a new pn junction, so the layer will not increase the turn-on voltage for device operation, and meanwhile the epitaxial growth is much simpler than that of the tunnel junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.