Patent · US Active

Power module

US11646732B1 · kind B1 · utility

1Cited by
5References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 11, 2022
Grant dateMay 9, 2023
Priority date
Expiry dateJan 11, 2042

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02B70/10
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A power module includes: a GaN transistor, an NMOS transistor, a first capacitor, a first diode and a second diode. The NMOS transistor is electrically connected to the GaN transistor. A negative electrode of the first capacitor is electrically connected to an anode of the first diode and a gate of the GaN transistor. A cathode of the second diode is electrically connected to a gate of the NMOS transistor. The power module further includes a power module control terminal electrically connected to an anode of the first capacitor and an anode of the second diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.