Patent · US Active

Method for porosifying a material and semiconductor structure

US11651954B2 · kind B2 · utility

0Cited by

9References

10Claims

0Family size

Assignee

Cambridge Enterprise Limited · GB

Inventors

Tongtong ZHU · Cambridge, GB
Rachel A. OLIVER · Lawrence, US
Yingjun Liu · Longbeilingcun, CN

Key dates

Filing date	Sep 27, 2017
Grant date	May 16, 2023
Priority date	—
Expiry date	Mar 1, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/825
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for porosifying a Ill-nitride material in a semiconductor structure is provided, the semiconductor structure comprising a sub-surface structure of a first Ill-nitride material, having a charge carrier density greater than 5×1017 cm−3, beneath a surface layer of a second Ill-nitride material, having a charge carrier density of between 1×1014 cm−3 and 1×1017 cm−3. The method comprises the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first Ill-nitride material and the electrolyte, so that the sub-surface structure is porosified by electrochemical etching, while the surface layer is not porosified. A semiconductor structure and uses thereof are further provided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.