Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
US11651969B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Mar 16, 2020 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Mar 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.