Etching method, substrate processing apparatus, and substrate processing system
US11651971B2 · kind B2 · utility
1Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Jun 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method includes forming a protective layer containing a tin atom on a surface of a substrate. The substrate has a region to be etched and a mask provided on the region. The etching method further includes etching the region in the substrate using the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.