Semiconductor device including a semiconductor element with a gate electrode on only one surface
US11652023B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2020 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | May 11, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a highly reliable semiconductor device capable of reducing stress generated in a semiconductor element even when a highly elastic joining material such as a Pb-free material is used in a power semiconductor having a double-sided mounting structure. The semiconductor device includes a semiconductor element including a gate electrode only on one surface, an upper electrode connected to the surface of the semiconductor element on which the gate electrode is provided, and a lower electrode connected to a surface opposite to the surface of the semiconductor element on which the gate electrode is provided. A connection end portion of the upper electrode with the surface of the semiconductor element on which the gate electrode is provided is located inside an end portion of the surface of the semiconductor element on which the gate electrode is provided, and a connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside an end portion of the opposite surface of the semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.