Semiconductor device and method of manufacturing the same
US11652100B2 · kind B2 · utility
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1References
19Claims
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Key dates
| Filing date | May 7, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Jul 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a silicon film for a diode formed on a semiconductor substrate via an insulating film, and first and second wirings formed on an upper layer of the silicon film. The silicon film has a p-type silicon region and a plurality of n-type silicon regions, and each of the plurality of n-type silicon regions is surrounded by the p-type silicon region in a plan view. The p-type silicon region is electrically connected to the first wiring, and the plurality of n-type silicon regions are electrically connected to the second wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.