Metal-semiconductor contact structure based on two-dimensional semimetal electrodes

US11652147B1 · kind B1 · utility

Assignee

• University of Science and Technology Beijing · CN

Inventors

• Yue Zhang · Nashua, US
• Xiankun Zhang · Beijing, CN
• Zheng Zhang · Beijing, CN
• Huihui Yu · Beijing, CN
• Mengting Huang · Beijing, CN
• Wenhui Tang · Beijing, CN
• Li Gao · Nanjing, CN
• Xiaofu Wei · Beijing, CN

Key dates

• Filing date: Nov 2, 2022
• Grant date: May 16, 2023
• Expiry date: Nov 2, 2042

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Disclosed is a metal-semiconductor contact structure based on two-dimensional (2D) semimetal electrodes, including a semiconductor module and a metal electrode module, where the semiconductor module is a 2D semiconductor material, and the metal electrode module is a 2D semimetal material with no dangling bonds on its surface; the 2D semiconductor material and the 2D semimetal material are interfaced with a Van der Waals interface with a surface roughness of 0.01-1 nanometer (nm) and no dangling bonds on the surface, the 2D semiconductor material and the 2D semimetal material are spaced less than 1 nm apart.