IGBT and manufacturing method therefor
US11652164B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jun 12, 2019 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Aug 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
An IGBT and a manufacturing method therefor, wherein a target region in the IGBT is doped with first ions; the target region comprises at least one of a P-type substrate (11), a P-type well region (13), and a P-type source region (14); and the diffusion coefficient of the first ions is greater than the diffusion coefficients of boron ions. A PN junction formed by means of the present invention is a gradual junction, thereby improving breakdown voltage, shortening turn-off time, and improving anti-latch capability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.