Method of manufacturing bulk acoustic wave resonator
US11652460B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 30, 2022 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Aug 30, 2042 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/42
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Provided is a method of manufacturing a bulk acoustic wave resonator, which includes: providing a piezoelectric substrate for forming a piezoelectric layer; forming a first electrode structure on the portion of the piezoelectric substrate for forming the piezoelectric layer; forming a dielectric layer on the first electrode structure, and performing a patterning process on the dielectric layer to form a patterned dielectric layer comprising a sacrificial dielectric part and a periphery dielectric part; forming a boundary layer on the patterned dielectric layer, the boundary layer covering a surface of the patterned dielectric layer and surrounding the sacrificial dielectric part; thinning the piezoelectric substrate to form the piezoelectric layer, the first electrode structure being located at a first side of the piezoelectric layer; forming a second electrode structure on a second side of the piezoelectric layer; and removing the sacrificial dielectric part to form a resonant cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.