Image sensor
US11653110B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2021 |
| Grant date | May 16, 2023 |
| Priority date | — |
| Expiry date | Sep 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.