Plasma ashing method using residue gas analyzer
US11654461B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 21, 2021 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jun 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.