Dielectric film, dielectric element, and electronic circuit board
US11655159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2020 |
| Grant date | May 23, 2023 |
| Priority date | — |
| Expiry date | Jan 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10015
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dielectric film includes a main component of a complex oxide represented by a general formula of (Sr1-xCax)yTiO3. 0.40≤x≤0.90 and 0.90≤y≤1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2θ of 32° or more and 34° or less to an intensity of a diffraction peak appearing at a diffraction angle 2θ of 46° or more and 48° or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-Kα ray as an X-ray source is 3.00 or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.